SWSs were varied from 160–200 nm, which were same as First of all the polished (100) silicon was cleaned with that of nickel nanoclusters. 2b, the height of the silicon nitride SWS was measured to be 140–150 nm, diameters of fabricated The fabrication procedure is schematically shown in Fig. Chang properties of the texturing structures through spectro- Taiwan Semiconductor Manufacturing Company Ltd, scopic measurements. We fabricate the silicon nitride National Tsing Hua University, Hsinchu, Taiwan sub-wavelength structures using the mask less RIE tech- nique on silicon substrate and explore the reflection C.-W.
Huang Department of Materials Science and Engineering, that of a DLAR solar cell. e-mail: Thus we can cost down the deposition of 2nd ARCs layer can be saved with better or comparable performance as M.-K. Chen Department of Materials Science and Engineering, second ARC layer with an effective refractive index so National Chiao Tung University, Hsinchu, Taiwan that the total structure can perform as a DLAR layer. The main motivation behind this lies in the fact that the sub-wavelength structures will act as a K. In this study, we fabricated sub-wavelength structure on antireflection coating layers instead of semiconductor layer on solar cell. to cover a broad range of the solar spectrum. Many researchers have investigated much report on texturization of silicon nitride and the double-layer antireflection (DLAR) coatings because optical properties of submicron textures on silicon nitride single-layer antireflection coatings (SLAR) are not able for the application of solar cells. Unfortunately, there is not solar cell design. Some groups have Introduction succeeded in fabricating uniform textures with a submicron scale on mc-Si wafers by reactive ion etching and applied The antireflection coating has become a key feature for to the Si solar cells. One of the promising options is surface texturing by dry etching technique. To date, a wide variety of techniques SWS fabrication Reflectance Anti-reflective coatings have been investigated for texturing multi-crystalline (mc) silicon cells. principle to achieve the necessary low refractive indices is always the same: substrate material is mixed with air on a Keywords Sub-wavelength Structure Solar cell sub-wavelength scale. In publications concerning for single layer anti-reflection (SLAR) coatings and SWS broadband or solar anti-reflective surfaces, the and a 0.8% improvement in efficiency has been seen. Using the measured reflectivity data length structured (SWS) surface with dimensions smaller in PC1D, the solar cell characteristics has been compared than the wavelength of light. low reflectivity below 1% was observed over wavelength An alternative to multilayer ARCs are the sub-wave- from 590 to 680 nm. Silicon nitride SWS surfaces with diameter of diffusion of the multilayer ARCs limit the device perfor- 160–200 nm and a height of 140–150 nm were obtained. Addition- nanoparticle masks and inductively coupled plasma (ICP) ally, thermal mismatch induced lamination and material ion etching.
Nanoscale Res Lett (2009) 4:680–683 DOI 10.1007/s1167-7 NA NO EX PRESS Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application Kartika Chandra Sahoo Æ Men-Ku Lin Æ Edward-Yi Chang Æ Yi-Yao Lu Æ Chun-Chi Chen Æ Jin-Hua Huang Æ Chun-Wei Chang Received: 7 February 2009 / Accepted: 5 March 2009 / Published online: 22 April 2009 to the authors 2009 Abstract We have developed a simple and scalable Unfortunately, multilayer ARCs are expensive to fabricate approach for fabricating sub-wavelength structures (SWS) owing to the stringent requirement of high vacuum, on silicon nitride by means of self-assembled nickel material selection, and layer thickness control. Sahoo, Kartika Lin, Men-Ku Chang, Edward-Yi Lu, Yi-Yao Chen, Chun-Chi Huang, Jin-Hua Chang, Chun-Wei Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster.